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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Freescale Semiconductor, Inc.
Order this document by MRF19030/D
The RF MOSFET Line
RF Power Field Effect Transistors
Designed for class AB PCN and PCS base station applications with frequencies from 1.8 to 2.0 GHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. * CDMA Performance @ 1990 MHz, 26 Volts IS - 97 CDMA Pilot, Sync, Paging, Traffic Codes 8 Thru 13 885 kHz -- - 47 dBc @ 30 kHz BW 1.25 MHz -- - 55 dBc @ 12.5 kHz BW 2.25 MHz -- - 55 dBc @ 1 MHz BW Output Power -- 4.5 Watts Avg. Power Gain -- 13.5 dB Efficiency -- 17% * Internally Matched, Controlled Q, for Ease of Use * High Gain, High Efficiency and High Linearity * Integrated ESD Protection * Designed for Maximum Gain and Insertion Phase Flatness * Capable of Handling 10:1 VSWR, @ 26 Vdc, 1.93 GHz, 30 Watts CW Output Power * Excellent Thermal Stability * Characterized with Series Equivalent Large - Signal Impedance Parameters * Low Gold Plating Thickness on Leads, 40 Nominal. * In Tape and Reel. R3 Suffix = 250 Units per 32 mm, 13 Inch Reel.
N - Channel Enhancement - Mode Lateral MOSFETs
MRF19030LR3 MRF19030LSR3
2.0 GHz, 30 W, 26 V LATERAL N - CHANNEL RF POWER MOSFETs
Freescale Semiconductor, Inc...
CASE 465E - 04, STYLE 1 NI - 400 MRF19030LR3
CASE 465F - 04, STYLE 1 NI - 400S MRF19030LSR3
MAXIMUM RATINGS
Rating Drain - Source Voltage Gate - Source Voltage Total Device Dissipation @ TC = 25C Derate above 25C Storage Temperature Range Operating Junction Temperature Symbol VDSS VGS PD Tstg TJ Value 65 - 0.5, +15 83.3 0.48 - 65 to +150 200 Unit Vdc Vdc Watts W/C C C
THERMAL CHARACTERISTICS
Characteristic Thermal Resistance, Junction to Case Symbol RJC Value 2.1 Unit C/W
ESD PROTECTION CHARACTERISTICS
Test Conditions Human Body Model Machine Model Class 2 (Minimum) M3 (Minimum)
NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed.
Rev. 10
MOTOROLA RF Motorola, Inc. 2004 DEVICE DATA
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MRF19030LR3 MRF19030LSR3 1
Freescale Semiconductor, Inc.
ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted)
Characteristic OFF CHARACTERISTICS Drain - Source Breakdown Voltage (VGS = 0 Vdc, ID = 20 A) Zero Gate Voltage Drain Current (VDS = 28 Vdc, VGS = 0 Vdc) Gate - Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) ON CHARACTERISTICS Gate Threshold Voltage (VDS = 10 Vdc, ID = 100 Adc) Gate Quiescent Voltage (VDS = 28 Vdc, ID = 300 mA) VGS(th) VGS(Q) VDS(on) gfs 2 2 -- -- 3 3.3 0.29 2 4 4.5 0.4 -- Vdc Vdc Vdc S V(BR)DSS IDSS IGSS 65 -- -- -- -- -- -- 1 1 Vdc Adc Adc Symbol Min Typ Max Unit
Freescale Semiconductor, Inc...
Drain - Source On - Voltage (VGS = 10 Vdc, ID = 1 Adc) Forward Transconductance (VDS = 10 Vdc, ID = 1 Adc) DYNAMIC CHARACTERISTICS Input Capacitance (Including Input Matching Capacitor in Package) (1) (VDS = 26 Vdc, VGS = 0, f = 1 MHz) Output Capacitance (1) (VDS = 26 Vdc, VGS = 0, f = 1 MHz) Reverse Transfer Capacitance (VDS = 26 Vdc, VGS = 0, f = 1 MHz) FUNCTIONAL TESTS (In Motorola Test Fixture, 50 ohm system) Two - Tone Common - Source Amplifier Power Gain (VDD = 26 Vdc, Pout = 30 W PEP, IDQ = 300 mA, f1 = 1960.0 MHz, f2 = 1960.1 MHz) Two - Tone Drain Efficiency (VDD = 26 Vdc, Pout = 30 W PEP, IDQ = 300 mA, f1 = 1960.0 MHz, f2 = 1960.1 MHz) 3rd Order Intermodulation Distortion (VDD = 26 Vdc, Pout = 30 W PEP, IDQ = 300 mA, f1 = 1960.0 MHz, f2 = 1960.1 MHz) Input Return Loss (VDD = 26 Vdc, Pout = 30 W PEP, IDQ = 300 mA, f1 = 1960.0 MHz, f2 = 1960.1 MHz) Two - Tone Common - Source Amplifier Power Gain (VDD = 26 Vdc, Pout = 30 W PEP, IDQ = 300 mA, f1 = 1930.0 MHz, f2 = 1930.1 MHz and f1 = 1990.0 MHz, f2 = 1990.1 MHz) Two - Tone Drain Efficiency (VDD = 26 Vdc, Pout = 30 W PEP, IDQ = 300 mA, f1 = 1930.0 MHz, f2 = 1930.1 MHz and f1 = 1990.0 MHz, f2 = 1990.1 MHz) 3rd Order Intermodulation Distortion (VDD = 26 Vdc, Pout = 30 W PEP, IDQ = 300 mA, f1 = 1930.0 MHz, f2 = 1930.1 MHz and f1 = 1990.0 MHz, f2 = 1990.1 MHz) Input Return Loss (VDD = 26 Vdc, Pout = 30 W PEP, IDQ = 300 mA, f1 = 1930.0 MHz, f2 = 1930.1 MHz and f1 = 1990.0 MHz, f2 = 1990.1 MHz) Output Mismatch Stress (VDD = 26 Vdc, Pout = 30 W CW, IDQ = 300 mA, f = 1930 MHz, VSWR = 10:1, All Phase Angles at Frequency of Tests) (1) Part is internally matched both on input and output.
Ciss Coss Crss
-- -- --
98.5 37 1.3
-- -- --
pF pF pF
Gps
--
13
--
dB
--
36
--
%
IMD
--
- 31
--
dBc
IRL
--
- 13
--
dB
Gps
12
13
--
dB
33
36
--
%
IMD
--
- 31
- 28
dBc
IRL
--
- 13
-9
dB
No Degradation In Output Power Before and After Test
MRF19030LR3 MRF19030LSR3 2
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MOTOROLA RF DEVICE DATA
Freescale Semiconductor, Inc.
VGG + C2 B1 B2 R3 B3 B4 B5 VDD + C8
R1
R2
C3
C4
R4
+ C6 C9
R5
C5
R6
R7
L2
L3
Z6 Z7 RF INPUT Z5 Z1 Z2 C1 L1 Z3 Z4 DUT C10 Z8 C7 L4 Z9 Z10
RF OUTPUT
Freescale Semiconductor, Inc...
B1 - B5 C1, C7 C2, C8 C3, C5 C4, C6 C9 C10 L1 - L4 R1 - R7 Z1 Z2
Short Ferrite Beads 10 pF Chip Capacitors, B Case 470 F, 35 V Electrolytic Capacitors 0.1 F Chip Capacitors, B Case 5.1 pF Chip Capacitors, B Case 22 F Tantalum Chip Capacitor 0.4 - 2.5 pF Variable Capacitor, Johanson Gigatrim 12.5 nH Inductors 12 Chip Resistors (0805) 0.080 x 0.595 Microstrip 0.080 x 0.600 Microstrip
Z3 Z4 Z5 Z6 Z7 Z8 Z9 Z10 Substrate
0.080 0.325 0.510 0.510 0.325 0.080 0.080 0.080 0.030 Arlon
x 0.480 Microstrip x 0.280 Microstrip x 0.200 Microstrip x 0.200 Microstrip x 0.280 Microstrip x 0.480 Microstrip x 0.530 Microstrip x 0.671 Microstrip x 3.00 x 5.00 Glass Teflon,
Figure 1. MRF19030LR3(LSR3) Test Circuit Schematic
C2 C3 R1 B1 B2 R2 R3 R4 L2 C1 C4 B3 R5 C9 L3 C6 C7 R6 B4 R7 B5 C5
C8
L1
L4
C10
MRF19030 Rev. 0
Figure 2. MRF19030LR3(LSR3) Test Circuit Component Layout MOTOROLA RF DEVICE DATA
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MRF19030LR3 MRF19030LSR3 3
Freescale Semiconductor, Inc.
TYPICAL CHARACTERISTICS
, DRAIN EFFICIENCY (%),G ps , POWER GAIN (dB) IRL, INPUT RETURN LOSS (dB) IMD, INTERMODULATION DISTORTION (dBc) 50 IRL 40 30 VDD = 26 Vdc IDQ = 300 mA, Pout = 30 W (PEP) Two-Tone Measurement, 100 kHz Tone Spacing Gps 10 IMD 0 1900 1920 1940 1960 1980 f, FREQUENCY (MHz) 2000 -35 2020 -30 -20 -15 -10 , DRAIN EFFICIENCY (%),G ps , POWER GAIN (dB) VDD = 26 Vdc IDQ = 350 mA, f = 1960 MHz, Channel Spacing (Channel Bandwidth): 885 kHz (30 kHz), 1.25 MHz (12.5 kHz), 2.25 MHz (1 MHz) ADJACENT CHANNEL POWER RATION (dB) IMD, INTERMODULATION DISTORTION (dBc) 45 40 35 30 2.25 MHz 25 885 kHz 20 1.25 MHz 15 10 5 0 2 4 6 8 10 Pout, OUTPUT POWER (WATTS Avg.) CDMA Gps CDMA 9 Channels Forward PILOT:0, PAGING:1, TRAFFIC:8-13, SYNC:32 -20 -30 -40 -50 -60 -70 -80 -90
20
-25
-100 12
Freescale Semiconductor, Inc...
Figure 3. Class AB Broadband Circuit Performance
Figure 4. CDMA ACPR, Power Gain and Drain Efficiency versus Output Power
-25 IMD, INTERMODULATION DISTORTION (dBc) -30 -35 -40 -45 350 mA -50 300 mA -55 1.0 10 Pout, OUTPUT POWER (WATTS) PEP 100 VDD = 26 Vdc, f = 1960 MHz Two-Tone Measurement, 100 kHz Tone Spacing 200 mA 300 mA 400 mA IMD, INTERMODULATION DISTORTION (dBc)
-20 -30 -40 -50 5th Order -60 -70 -80 1.0 7th Order VDD = 26 Vdc, IDQ = 300 mA, f = 1960 MHz Two-Tone Measurement, 100 kHz Tone Spacing 3rd Order
10 Pout, OUTPUT POWER (WATTS) PEP
100
Figure 5. Intermodulation Distortion versus Output Power
Figure 6. Intermodulation Distortion Products versus Output Power
15
14 f = 1960 MHz IDQ = 300 mA, Pout = 30 W (PEP) Two-Tone Measurement, 100 kHz Tone Spacing Gps 13
-22 -24 -26 -28 -30 IMD -32
G ps , POWER GAIN (dB)
350 mA 300 mA 13 300 mA 12 200 mA VDD = 26 Vdc, f = 1960 MHz Two-Tone Measurement, 100 kHz Tone Spacing 11 1.0 10 Pout, OUTPUT POWER (WATTS) PEP 100
G ps , POWER GAIN (dB)
14
400 mA
13.5
12.5
-34 -36
12 20
22
24
26
28
30
32
-38 34
VDD, DRAIN VOLTAGE (VOLTS)
Figure 7. Power Gain versus Output Power
Figure 8. Power Gain and Intermodulation Distortion versus Supply Voltage
MRF19030LR3 MRF19030LSR3 4
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MOTOROLA RF DEVICE DATA
Freescale Semiconductor, Inc.
f = 1990 MHz f = 1990 MHz Zload f = 1930 MHz f = 1930 MHz Zsource
Freescale Semiconductor, Inc...
Zo = 25
VDD = 26 V, IDQ = 300 mA, Pout = 30 W PEP f MHz 1930 1960 1990 Zsource 10.57 - j7.69 10.54 - j7.43 10.47 - j7.21 Zload 5.81 - j5.01 5.84 - j4.67 5.84 - j4.35
Zsource = Test circuit impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground.
Input Matching Network
Device Under Test
Output Matching Network
Z
source
Z
load
Figure 9. Series Equivalent Source and Load Impedance
MOTOROLA RF DEVICE DATA
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MRF19030LR3 MRF19030LSR3 5
Freescale Semiconductor, Inc.
NOTES
Freescale Semiconductor, Inc...
MRF19030LR3 MRF19030LSR3 6
For More Information On This Product, Go to: www.freescale.com
MOTOROLA RF DEVICE DATA
Freescale Semiconductor, Inc.
PACKAGE DIMENSIONS
2X G SEE NOTE 4 1 2X K 2 2X D bbb N (LID) ccc
M M
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M NOTES: 1. CONTROLLING DIMENSION: INCH. 2. INTERPRET DIMENSIONS AND TOLERANCES PER ASME Y14.5M, 1994. 3. DIMENSION H IS MEASURED 0.030 (0.762) AWAY FROM PACKAGE BODY. 4. INFORMATION ONLY: CORNER BREAK (4X) TO BE .060.005 (1.520.13) RADIUS OR .06.005 (1.520.13) x 45 CHAMFER. INCHES MIN MAX .795 .805 .380 .390 .125 .163 .275 .285 .035 .045 .004 .006 .600 BSC .057 .067 .092 .122 .395 .405 .395 .405 .120 .130 .395 .405 .395 .405 .005 BSC .010 BSC .015 BSC MILLIMETERS MIN MAX 20.19 20.44 9.65 9.9 3.17 4.14 6.98 7.24 0.89 1.14 0.10 0.15 15.24 BSC 1.45 1.7 2.33 3.1 10 10.3 10 10.3 3.05 3.3 10 10.3 10 10.3 0.127 BSC 0.254 BSC 0.381 BSC
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Freescale Semiconductor, Inc...
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CASE 465E - 04 ISSUE E NI - 400 MRF19030LR3
STYLE 1: PIN 1. DRAIN 2. GATE 3. SOURCE
2X D bbb M T A
1
M
B
M
NOTES: 1. CONTROLLING DIMENSION: INCH. 2. INTERPRET DIMENSIONS AND TOLERANCES PER ASME Y14.5M-1994. 3. DIMENSION H IS MEASURED 0.030 (0.762) AWAY FROM PACKAGE BODY. DIM A B C D E F H K M N R S aaa bbb ccc INCHES MIN MAX .395 .405 .395 .405 .125 .163 .275 .285 .035 .045 .004 .006 .057 .067 .092 .122 .395 .405 .395 .405 .395 .405 .395 .405 .005 REF .010 REF .015 REF MILLIMETERS MIN MAX 10.03 10.29 10.03 10.29 3.18 4.14 6.98 7.24 0.89 1.14 0.10 0.15 1.45 1.70 2.34 3.10 10.03 10.29 10.03 10.29 10.03 10.29 10.03 10.29 0.127 REF 0.254 REF 0.38 REF
2
2X K ccc E TA B R C
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STYLE 1: PIN 1. DRAIN 2. GATE 3. SOURCE
CASE 465F - 04 ISSUE C NI - 400S MRF19030LSR3
MOTOROLA RF DEVICE DATA
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MRF19030LR3 MRF19030LSR3 7
Freescale Semiconductor, Inc.
Freescale Semiconductor, Inc...
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MRF19030LR3 MRF19030LSR3 8
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MOTOROLA RF DEVICE MRF19030/D DATA

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